GaNPower is a leading company in the field of gallium nitride (GaN) semiconductor technology. The company specializes in the design, development, and production of high-performance GaN-based power devices and modules for a wide range of applications, including power electronics, renewable energy, electric vehicles, and aerospace.
GaNPower was founded in 2015 by a team of experienced engineers and scientists with a deep understanding of GaN technology and its potential for revolutionizing the power electronics industry. The company has since grown rapidly, attracting top talent from around the world and establishing partnerships with leading companies in the semiconductor and power electronics industries.
One of the key advantages of GaN technology is its ability to handle high voltages and currents with minimal losses, resulting in higher efficiency, smaller size, and lower cost compared to traditional silicon-based power devices. GaNPower's products leverage this advantage to deliver superior performance and reliability in a wide range of applications.
GaNPower's product portfolio includes a variety of GaN-based power devices and modules, including transistors, diodes, and integrated circuits. The company's products are designed to meet the needs of a wide range of customers, from small startups to large corporations, and are available in a variety of package types and configurations.
In addition to its product offerings, GaNPower also provides a range of design and consulting services to help customers optimize their power electronics systems for maximum performance and efficiency. The company's team of experts can provide guidance on everything from device selection and circuit design to thermal management and reliability testing.
Overall, GaNPower is a company that is at the forefront of the GaN semiconductor revolution, delivering innovative and high-performance solutions to customers around the world. With its deep expertise in GaN technology and its commitment to customer satisfaction, GaNPower is poised to continue its rapid growth and success in the years to come.
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GP16510S | GaNPower镓能半导体 | N沟道 Vds=650V Id=10A | 62.58 | ||||
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GP1A015TS_263 | GaNPower镓能半导体 | N沟道 Vds=1000V Id=15A | 112.246 | ||||
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GP16520DS | GaNPower镓能半导体 | N沟道 Vds=650V Id=20A | 80.425 | ||||
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GP16520TD4 | GaNPower镓能半导体 | N沟道 Vds=650V Id=20A | 80.425 | ||||
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GP16530TD4 | GaNPower镓能半导体 | N沟道 Vds=650V Id=30A | 90.3 | ||||
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GP1A215TS_252 | GaNPower镓能半导体 | N沟道 Vds=1200V Id=15A | 112.246 | ||||
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GP1A215TS_263 | GaNPower镓能半导体 | N沟道 Vds=1200V Id=15A | 112.246 | ||||
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GP16515TD4 | GaNPower镓能半导体 | N沟道 Vds=650V Id=15A | 73.08 | ||||
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GP16515DS | GaNPower镓能半导体 | N沟道 Vds=650V Id=15A | 73.08 | ||||
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GP16530DS | GaNPower镓能半导体 | N沟道 Vds=650V Id=30A | 90.3 |
